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Foresight Activities > Foresight Conferences > The 1st Adv. Nanotech. Conf. > Abstracts
 


Orientation Aligned ZnS Nanowire Bundles: an approach for fabrication of nanowire arrays

Daniel Moore*, Yong Ding, and Z.L. Wang

Georgia Institute of Technology
Atlanta, GA 30332 USA

This is an abstract for a presentation given at the
1st Conference on Advanced Nanotechnology:
Research, Applications, and Policy

 

Due to their potential applications, ranging from nanoscale electronic devices to tools for biomedical applications, one-dimensional semiconductor nanostructures such as nanowires and nanobelts offer a high degree of interest for furthering the current state of nanotechnology research and development. Now nanorods, nanowires, nanotubes, and nanobelts of various materials have been successfully synthesized and they demonstrate novel luminescent, electronic, optical and mechanical properties.

ZnS is a direct wide band gap (3.91 eV) compound semiconductor that has a high index of refraction and a high transmittance in the visible range, and is one of the most important materials for photonics. As a one dimensional nanostructure, ZnS has been synthesized as nanowires, nanobelts, and nanocombs, but these nanostructures are randomly distributed on the surface of the substrate. For applications in photonics, it is desperately needed to synthesize ZnS nanostructures that are highly aligned and ordered, but this type structure has not been realized experimentally.

We report a novel approach for growing of aligned and orientation ordered ZnS nanowires. Our method uses a buffer layer of CdSe grown on a Si(111) substrate, on which ZnS nanowires are grown. The growth process of the nanowires buldles is presented. The technique demonstrated could be an effective pathway for growing patterned, aligned, size controlled and orientation ordered ZnS nanowires. This method shows the possibility of growing a large area of orientation ordered ZnS nanowires with the use of c-axis oriented CdSe film/substrate. It is thus possible to grow patterned and uniformly sized ZnS nanowire arrays for applications in luminescence, electronics, sensors, and other nanotechnology.

Abstract in Microsoft Word® format 20,806 bytes


*Corresponding Address:
Daniel Moore
Materials Science and Engineering, Georgia Institute of Technology
771 Ferst Dr., N.W., Atlanta, GA 30332 USA
Phone: (404) 385-0326
Email: daniel.moore@mse.gatech.edu
Web: http://www.nanoscience.gatech.edu/zlwang



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