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Bridging the Nano-Technology Barrier
for Next Generation
Semiconductor Products Manufacturing

M. Gersonde*

Elan Advanced Semiconductor, Ltd.

This is an abstract for a poster to be presented at the
Fifth Foresight Conference on Molecular Nanotechnology.
There will be a link from here to the full article when it is available on the web.

 

This technology utilizes the Lorenz Force interactions of light fields with the dipole moment of atoms to first cool, then impose coherence upon a stream of isotopically purified atoms. These forces are subsequently used to direct the deposition of the coherent atom beam, creating semiconductor and nano-devices of micron to sub-micron sizes upon appropriate substrates with virtual atomic control.

This technology uses the precise control of the tuned light field, amplitude, phase, polarization and dimensions through the incorporation of Computer Generated Holographic Optical Elements. Used in conjunction with other optical and diffractive elements these directly manipulate the energy states of the individual atoms in the fabrication steps, thus determining their exact bond sites and energies.

Patents have been applied for and are pending on this and related technologies.


*Corresponding Address:
Michael Gersonde, 683 San Juan Dr., Suite # 2, Sunnyvale, CA 94086-3330, ph: (408) 542-2625, email: elan23@ix.netcom.com



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