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High Mobility Semiconducting Nanotubes for Diodes, Transistors, and Single-Electron Memories

M. S. Fuhrer*, B. M. Kim, T. Durkop, and T. Brintlinger

Department of Physics, University of Maryland,
College Park, MD 20742-4111 USA

This is an abstract for a presentation given at the
10th Foresight Conference on Molecular Nanotechnology


Single-walled carbon nanotubes (SWNTs) are currently being considered for revolutionary applications in nanolectronics. While metallic SWNTs (m-SWNTs) have been shown to conduct electrons ballistically over micron lengths at room temperature[1], semiconducting SWNTs (s-SWNTs) synthesized via laser ablation have been previously reported to have poor mobilities (~20 cm2/V-s) due to large conduction barriers along their length[1]. Here we show that s-SWNTs grown by chemical vapor deposition have extremely high mobilities, ~20,000 cm2/V-s at room temperature, greatly exceeding those of silicon. High-mobility nanotube field-effect transistors are used to construct non-volatile charge storage memory cells operating at room temperature[2]. Reading, writing and erasing a single electron is demonstrated at temperatures up to 100 K, with a switching current of >50 nA per electron. Metal-semiconductor nanotube junctions are also fabricated; these nanometer-sized intramolecular junctions are capable of rectifying microamp currents[3].

  1. Bachtold, A., M. S. Fuhrer, S. Plyasunov, M. Forero, E. H. Anderson, A. Zettl, and P. L. McEuen, Physical Review Letters 84, 6082 (2000).
  2. M. S. Fuhrer, B. M. Kim, T. D¸rkop, and T. Brintlinger, to appear in Nano Letters (2002).
  3. M. S. Fuhrer, J. Nygård, L. Shih, M. Forero, Young-Gui Yoon, M. S. C. Mazzoni, Hyoung Joon Choi, Jisoon Ihm, Steven G. Louie, A. Zettl and Paul L. McEuen, Science 288, 494 (2000).

*Corresponding Address:
M. S. Fuhrer
Department of Physics, University of Maryland,
College Park, MD 20742-4111 USA
Phone: 301-405-6143 Fax: 301-314-9465


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