Single-walled carbon nanotubes (SWNTs) are currently being considered for revolutionary applications in nanolectronics. While metallic SWNTs (m-SWNTs) have been shown to conduct electrons ballistically over micron lengths at room temperature, semiconducting SWNTs (s-SWNTs) synthesized via laser ablation have been previously reported to have poor mobilities (~20 cm2/V-s) due to large conduction barriers along their length. Here we show that s-SWNTs grown by chemical vapor deposition have extremely high mobilities, ~20,000 cm2/V-s at room temperature, greatly exceeding those of silicon. High-mobility nanotube field-effect transistors are used to construct non-volatile charge storage memory cells operating at room temperature. Reading, writing and erasing a single electron is demonstrated at temperatures up to 100 K, with a switching current of >50 nA per electron. Metal-semiconductor nanotube junctions are also fabricated; these nanometer-sized intramolecular junctions are capable of rectifying microamp currents.
Bachtold, A., M. S. Fuhrer, S. Plyasunov, M. Forero, E. H. Anderson, A. Zettl, and P. L. McEuen, Physical Review Letters84, 6082 (2000).
M. S. Fuhrer, B. M. Kim, T. D¸rkop, and T. Brintlinger, to appear in Nano Letters (2002).
M. S. Fuhrer, J. Nygård, L. Shih, M. Forero, Young-Gui Yoon, M. S. C. Mazzoni, Hyoung Joon Choi, Jisoon Ihm, Steven G. Louie, A. Zettl and Paul L. McEuen, Science288, 494 (2000).