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Selective Deposition of Molecules through Polymethylmethacrylate Patterns Defined by Electron Beam Lithography

Qingling Hang*, a, Yuliang Wangb, Marya Liebermanb, and Gary H. Bernsteina

aDepartment of Electrical Engineering, University of Notre Dame,
Notre Dame, IN 46556 USA

bDepartment of Chemistry and Biochemistry, University of Notre Dame,
Notre Dame, IN 46556 USA

This is an abstract for a presentation given at the
10th Foresight Conference on Molecular Nanotechnology

 

Toward the development of a practical molecular computing scheme, certain molecules are thought to be able to perform quantum state switching at room temperature (for example, digital bit 1 to 0). For the implementation of logic functions, these molecules must be arranged on surfaces in a controlled manner. The Creutz-Taube molecule [(NH3)5Ru(pyrazine)Ru(NH3)5](o-toluenesulphonate)5 (CT5) can be viewed as a two-dot molecule for the purposes of molecular computing. We report here nanopatterning of CT5 molecules through the use of electron beam lithography (EBL) and polymethylmethacrylate (PMMA) electron resist. After development of electron beam modified PMMA films on SiO2, trenches with exposed surfaces were formed. These wafers were then soaked in CT5 aqueous solution. Atomic force microscopy and X-ray photoelectron spectroscopy were used to investigate the surface characteristics of wafers after dissolution of the PMMA and to confirm the binding of a monolayer of CT5 molecules on the wafer within the areas delimited by the PMMA trenches. CT5 molecules were deposited as a monolayer with two Ru atoms lying on the SiO2 surface. 35-nm-wide lines of a monolayer of CT5 molecules on a SiO2 surface were demonstrated.

Abstract in Microsoft Word® format 20,806 bytes


*Corresponding Address:
Qingling Hang
Department of Electrical Engineering, University of Notre Dame
275 Fitzpatrick Hall, Notre Dame, IN 46556 USA
Phone: (574) 631 4916 Fax: (574) 631 4393
Email: qhang@nd.edu



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