The orbital energy level adjustment molecular transistor
Lyes Hannache*, Mustafa Bencharif, Abdelghani May, Abdellah Zeïter, and Saber Boudjelel
Département d'electronique, Université de Constantine,
Constantine 25000 Algeria
This is an abstract
for a presentation given at the
Foresight Conference on Molecular Nanotechnology
The corresponding component of the transistor remains unavailable in molectronic nanotechnology. Namely, a molecular scale transistor with three terminals: one among it commands the flow of the current entering the two others. This terminal remains difficult to be integrated.
State of the art devices summarize principally in the atomic relay and the refined molecular switch . The main drawback of these structures lies in the switch commutation which is done by displacement or rotation of a molecule, therefore change of the total structure. They present a complex configuration and seem difficult to be inter-connected.
We propose a theoretical model of a molecular transistor based on the RTD synthesized by J. M. Tour and M. Reed (University of Notre-Dame) where the central island is replaced by a molecule called 'venyl cyclopenta-3-éne' which possesses a free control liaison. The functionality retrieves the classical behavior of a "MOS" transistor at the molecular scale. The orbital energy levels in the island are controled by the voltage applied to the free terminal in order to tune the current. It operates at room temperature, and occupies a surface harshly of 1.1 nm2 . The theoretical orbital analysis have been performed on the framework of Hartree-Fock theory. Experimental evidence of the model have been set through simulation tests using ab initio method ( 6-31G* ).
Finally, the model offers a substantial advantage relatively to state-of-the-art comparative structures, concerning the switch time delays.
Abstract in rich text format 10,676 bytes
Département d'electronique, Université de Constantine
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