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Synthesis of GaN nanowires Doped with Silicon

Ji Liu*, Xiang-Min Meng, Yang Jiang, Chun-Sing Lee, Igor Bello, and Shuit-Tong Lee

Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Material Science, City University of Hong Kong,
Kowloon Tong, Hong Kong, SAR, China

This is an abstract for a presentation given at the
11th Foresight Conference on Molecular Nanotechnology

 

In our report, we describe the successful synthesis of high quality GaN nanowires doped with silicon. The high-quality GaN nanowires doped with silicon has been synthesized by hot filament chemical vapor deposition on Si (100) wafers coated with Au, which grows according to the island-like catalytic growth process.

Results are summarized as follows:
The morphology of GaN nanowires was observed by scanning electron microscopy (SEM, Philips XL 30 FEG), the microstructure of the nanowires was investigated by transmission electron microscopy (TEM, Philips CM20), it is shown that the GaN nanowires have a uniform diameter around 10nm and possess a typical hexagonal wurtzite structure with a growth direction of [001]. Meanwhile, the optical property was studied by fluorescence spectrophotometer (Perkin-Elmer LS50B, Buckinghamshire UK) presenting a distinct blue shift of emission peak at 344nm due to the quantum confinement effect referencing to the bulk GaN. Raman scattering spectrum was examined by micro-Raman system (Renishaw 200) and the X-ray Diffraction spectrum was studied by Siemens D-500 X-ray diffract meter.

TOPICS + KEYWORDS: GaN nanowires , optical property

Abstract in Microsoft Word® format 24,902 bytes


*Corresponding Address:
Ji Liu
Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Material Science,
City University of Hong Kong
83 Tat Chee Avenue
Kowloon Tong, Hong Kong, SAR, China
Phone: 852-27844366 Fax: 85227844696
Email: liuji2000@yahoo.com



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