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Chemical profiling of single nanotubes:
intramolecular p-n-p junctions and on-tube single-electron transistors

Jing Konga, Jien Caoa, Hongjie Dai*, a, and Erik Andersonb

aChemistry Department, Stanford University,
Stanford, CA 94305 USA

bLawrence Berkeley National Laboratory

This is an abstract for a presentation given at the
Ninth Foresight Conference on Molecular Nanotechnology.
There will be a link from here to the full article when it is available on the web.

 

Electrical transport properties of intramolecular p-n-p junctions formed on individual semiconducting carbon nanotubes are reported. Chemical dopant 'profiling' along the length of a nanotube divides the nanotube into two p-doped sections and a central n-doped section. The double p-n junctions formed on the nanotube dictate the electrical characteristics of the system. Well-defined and highly reproducible single-electron transistors with much smaller size than the geometrical length of the nanotube are obtained.


*Corresponding Address:
Hongjie Dai
Chemistry Department, Stanford University
Stanford, CA 94305 USA
Phone: 650-725-9156
Fax: 650-725-9793
Email: hdai1@stanford.edu



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