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Design and quantification of a nanoscale field effect transistor

Marc in het Panhuis*, a, Jonathan Colemanb, Paul Popelierc, Brian Foleyb, Robert Munnc, Werner Blaub

aMedia Lab Europe, Ireland
bTrinity College Dublin, Ireland
cUMIST, United Kingdom

This is an abstract for a presentation given at the
Ninth Foresight Conference on Molecular Nanotechnology.
There will be a link from here to the full article when it is available on the web.

 

A new design for a field effect transistor able to push back the physical limits of Moorešs Law is described. The ON state of the device is characterized using ab initio computer simulation. An electron introduced on one side of the conjugated molecular switching element can move across to the other side of the molecule in an electric field in the absence of a gate voltage, a process analogous to conduction. The presence of a gate voltage effectively interrupts conjugation and suppresses conduction. A molecular-based processor of this type could demonstrate transistor density of up to 2 x 1012 transistors per cm2 and run at up to 12 THz.


*Corresponding Address:
Marc in het Panhuis
Nanostructures Group, Media Lab Europe, Ireland
Sugar House Lane, Bellevue, Dublin, Dublin 8, IRELAND
phone: + 353 87 948 3565
fax: +353 1 474 2809
email: mihp@media.mit.edu
http://www.medialabeurope.org



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