Foresight Nanotech Institute Logo
Image of nano


New advances in resist system for next generation lithography

Jordan Poler* and Keneth Gonsalves

Chemistry Department, University of North Carolina Charlotte,
Charlotte, NC 28223 USA

This is an abstract for a presentation given at the
Ninth Foresight Conference on Molecular Nanotechnology.
There will be a link from here to the full article when it is available on the web.

 

A novel nanocomposite resist system was developed for sub-100 nm resolution e-beam lithography by dispersing surface-treated silica nanoparticles in a commercial ZEP520® resist. At 4.0 wt % loading of silica nanoparticles, the system exhibited a much higher resolution than ZEP520® without sacrificing the intrinsic sensitivity and contrast of the starting polymer.

The first major result is that 46 nm-wide isolated lines were obtained in the nanocomposite system (~ 250 nm thick layer), whereas comparatively 130 nm-wide lines were obtained in ZEP520® under the same experimental conditions. Interestingly, this dramatic reduction of line broadening already occurred at 20 keV while higher energy e-beams (up to 100 keV) did not lead to further line broadening reduction. Moreover, it was shown that the addition of silica nanoparticles resulted in a higher resistance of the nanocomposite to plasma etching with O2 gas.

Subjecting the nanocomposite resist to 75 keV Xe+ ion irradiation showed that it is also particularly suitable for ion projection lithography as a preliminary resolution of 114 nm (l/s) was obtained while the sensitivity increased by a factor of 40 compared to 30 keV electrons. The major resolution improvement in this system indicates that nanocomposite systems are promising candidates for sub-100 nm resolution e-beam lithography. A mechanism, explaining the electron-nanocomposite interactions at the origin of line broadening reduction, is proposed and tentatively backed by preliminary Monte Carlo simulations.

We acknowledge the help of L. Merhari, CERAMEC R&D Limoges France and W.H. Bruenger, Fraunhofer Inst. For Silicon Technology (IsiT), Itzehoe, Germany

Abstract in RTF format 4,247 bytes


*Corresponding Address:
Jordan Poler
Chemistry Department, University of North Carolina Charlotte
9201 University City Blvd., Charlotte, NC 28223 USA
Phone: 704 687 3064
Fax: 704 687 3151
Email: jcpoler@email.uncc.edu



Donate Now

 

Foresight Programs

Join Now

 

Home About Foresight Blog News & Events Roadmap About Nanotechnology Resources Facebook Contact Privacy Policy

Foresight materials on the Web are ©1986–2014 Foresight Institute. All rights reserved. Legal Notices.

Web site development by Netconcepts. Email marketing by gravityMail. Maintained by James B. Lewis Enterprises.