Nature materials is reporting on the development of static "flash" memory based on antimony telluride "cells" that are flipped between amorphous and crystalline states. These cells may be able to be scaled to 10 nm. The architecture is very simple as it simply requires sensing the resistance of the cell to determine whether it is in a one or zero state. This is distinctly different from current DRAM memory cells which are based on the storage of electrons within a capacitor. Because the electrons leak out of the capacitor it is necessary to include electronics that restore the state of the memory on a continual basis.