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Non-volatile ferroelectric RAMS

A group of physicists (Naumov, Bellaiche & Fu) at the Univ. of Arkansas are reporting in Nature the exploration of phase transformations in non-volatile ferroelectric memories composed of Pb(Zr,TI)O3. They are finding that the minimum size of nanodiscs/nanorods able to retain a bistable state is of the order of 3.2 nm. That translates to 60×1012 bits/sq. inch (7+ terabytes/sq. in).

Obviously there are a couple of problems here. The first would be how do you read or write a nanorod every 3.2 nm? Of course this may drive the need for improved nanowiring and/or nanomechanical head positioning. The second would be the claim regarding "low-temperature structural bistability". How low does the temperature actually need to be? If one needs a room full of refrigeration equipment to allow a nanoscale memory to retain its data then the applications may be somewhat limited. E.g. you aren't going to see it in an iPod.

5 Responses to “Non-volatile ferroelectric RAMS”

  1. fedrive Says:

    Atomic Holographic Optical Nanostorage

    uses patented ferroelectric nanotechnology.

  2. Anonymous Coward Says:

    Backhand criticism of a Science article …

    just sounds like you're envious and/or ignorant.

    Got proof with your criticism? The authors of that article have demonstrated something interesting. What are you doing?

  3. Anonymous Coward Says:

    Re:Backhand criticism of a Science article …

    I am sure in your eyes,

    Ramtron and other companies with patents in FRAM /FERAM chips have not demonstrated anything either, but they also have patents.

    One thing that U of Ark will never have and that is where the rubber hits the road.

  4. fedrive Says:

    3D Ferroelectric Optical Nanostorage – 1998

    From Colossal Storage Website.

    Molecular dissociation following Thomas' patents cover methods for a Non-contact ultraviolet / blue laser photon induced electric field poling using UV at the same wavelength as a molecular transition will create controllable clouds of electrons in harmonic waves (plasmon).

    Thomas found that Ultraviolet light was not only mportant to create free conduction band electrons but that UV is the " Fountain of Youth " for ferroelectric molecules. That the use of UV in ferroelectric applications prevents fatigue and pinning of the Atomic Molecular Dipole.

    A secret not widely known in the use of ferroelectric materials except by a few ferroelectric materials experts like Colossal.

    Some organic/inorganic molecules have resonant valence orbit electrons that under the proper Quantum UV/Blue photoexcitation allow conduction band electrons to move freely for a short time. Plasmon known as electric current along with the nano/microwave electric field present providing a spin current mechanism for ferroelectric perovskite molecules to switch binary positions. The unique concept of resonant absorption excitation by UV/Blue light causing molecular dissociation and simultaneous electric field application ( Pockels effect ) can be used for writing 3D volume data so when it is read back having coherent interference waves in a beam of
    UV/Blue photon radiation.

    The single frequency creates many bright or dark bands from the UV light that are in phase or out of phase with one another. The diffraction by the bistable state nucleus in the center of ferroelectric dipole molecule can therefore be represented as a binary 0 or 1.

    http://www.colossalstorage.net/colossal5j.htm

    TOHOKU UNIVERSITY is Predicting 4 PETA BITS / SQ. IN. for ferroelectric BaTiO3 (Prof.Yasuo CHO) 1992

    http://www.d-nanodev.riec.tohoku.ac.jp/index.html

  5. woodsdot Says:

    Why must there always be negative response

    New ideas present opportunity for innovation and improvements. Here is a suggested idea for reading/writing at such a small scale. Mathematics. Instead of reading/writing bit by bit, try an aggregate approach with the read/write "head" or stylus or whatever covering a sector. The sector read/write tool would then imprint a bit signature across the area (not an individual bit) according to the technology and the memory would be read accordingly. This would require sensitive devices that could pick up variances in voltage and some additional codec algorithms, but it seems like it could be done. Why not?

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