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Single-electron transistor at IEDM

from the they-know-how-to-make-the-little-things-count dept.
GinaMiller pointed out an EE Times article on the upcoming International Electron Devices Meeting, Dec. 11-13 in San Francisco. "A team from Japan's NTT research laboratories has gone beyond the realm of single-transistor devices to build the first elemental circuit using single-electron transistors. The team fabricated the circuit using a silicon-on-insulator (SOI) process and a vertical pattern-dependent oxidation technique. When operating at 25 K, the circuit performed basic arithmetic calculations."

2 Responses to “Single-electron transistor at IEDM”

  1. RobertBradbury Says:

    Single Electron Device Bibliography

    From time to time I update my Single Electron Device Bibliography. It may be of interest for people who want to keep track of work in these areas. I would appreciate it if people who know of additional groups working in these areas or notice hot papers on the topics would let me know, so I can make an attempt at keeping this reference up-to-date.

  2. AndreLouviere Says:

    Single-electron transistor

    Well I guess now they'll skip the rest of the Gigahertz processors and move straigt to the Terahertz, or is it Teraflop?

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