Bridging the Nano-Technology Barrier
for Next Generation
Semiconductor Products Manufacturing
M. Gersonde*
Elan Advanced Semiconductor, Ltd.
This is an abstract
for a poster to be presented at the
Fifth
Foresight Conference on Molecular Nanotechnology.
There will be a link from here to the full article when it is
available on the web.
This technology utilizes the Lorenz Force interactions of
light fields with the dipole moment of atoms to first cool, then
impose coherence upon a stream of isotopically purified atoms.
These forces are subsequently used to direct the deposition of
the coherent atom beam, creating semiconductor and nano-devices
of micron to sub-micron sizes upon appropriate substrates with
virtual atomic control.
This technology uses the precise control of the tuned light
field, amplitude, phase, polarization and dimensions through the
incorporation of Computer Generated Holographic Optical Elements.
Used in conjunction with other optical and diffractive elements
these directly manipulate the energy states of the individual
atoms in the fabrication steps, thus determining their exact bond
sites and energies.
Patents have been applied for and are pending on this and
related technologies.
*Corresponding Address:
Michael Gersonde, 683 San Juan Dr., Suite # 2, Sunnyvale, CA
94086-3330, ph: (408) 542-2625, email: [email protected]
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